Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET
نویسندگان
چکیده
منابع مشابه
Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits
In this paper, we analyze the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region. The impacts of the most severe intrinsic device variations including work function variation (WFV) and fin line-edge roughness (fin LER) on TFET and FinFET device Ion, Ioff, Cg, 32-bit CLA delay and power-delay pr...
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ژورنال
عنوان ژورنال: IEEE Access
سال: 2021
ISSN: 2169-3536
DOI: 10.1109/access.2021.3088461